revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series sjxx04xsx series description this sjxx04x high temperature scr series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifers and capacitive discharge ignitions these scrs have a low gate current trigger level of 20 a maximum at approximately 1.5v. features & benefts ? voltage capability up to 600v ? surge capability up to 100a at 60hz half cycle ? 150c maximum junction temperature ? halogen free and rohs compliant main features symbol value unit i t(rms) 4 a v drm /v rrm 400 or 600 v i gt 0.2 ma schematic symbol applications typical applications includes capacitive discharge system for motorcycle engine cdi, portable generator engine ignition, strobe lights and nailers, as well as generic rectifers, battery voltage regulators and converters. also controls for power tools, home/brown goods and white goods appliances. ak g rohs absolute maximum ratings sensitive scrs symbol parameter test conditions value unit i t(rms) rms on-state current t c = 130c 4 a i t(av) average on-state current t c = 130c 2.56 a i tsm peak non-repetitive surge current single half cycle; f = 50 hz; t j (initial) = 25c 25 a single half cycle; f = 60 hz; t j (initial) = 25c 30 i 2 t i 2 t value for fusing t p = 8.3 ms 3.7 a 2 s di/dt critical rate of rise of on-state current f = 60 hz, t j = 150 c 50 a/s i gm peak gate current pw=20 s, t j = 150 c 0.5 a p g(av) average gate power dissipation t j = 150 c 0.1 w t stg storage temperature range -40 to 150 c t j operating junction temperature range -40 to 150 c v dsm /v rsm peak non-repetitive blocking voltage pw=100 s v drm /v rrm +100 v
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series electrical characteristics (t j = 25c, unless otherwise specifed) C sensitive scrs symbol test conditions value unit i gt v d = 6v r l = 100 min. 20 a max. 200 a v gt max. 0.8 v dv/dt v d = v drm ; r gk = 220 ; t j = 125c min. 45 v/s v gd v d = v drm ; r l = 3.3 k ; t j = 125c min. 0.2 v v d = v drm ; r l = 3.3 k ; tj = 150c min. 0.1 v v grm i gr = 10a min. 6 v i h i t = 20ma (initial) max. 6 ma t q t p =50s; dv/dt=5v/s; di/dt=-30a/s max. 60 s t gt i g = 2 x i gt ; pw = 15s; i t = 8a typ. 3 s static characteristics symbol test conditions value unit v tm i t = 8a; t p = 380 s max. 1. 6 v i drm / i rrm @ v drm / v rrm t j = 25c 400 - 600v max. 5 a t j = 125c, r gk = 220 400 - 600v 1000 t j = 150c, r gk = 220 400 - 600v 3000 thermal resistances symbol parameter value unit r (j-c) junction to case (ac) 1. 5 c/w figure 1: normalized dc gate trigger current vs. junction temperature (sensitive scr) 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 -4 0- 15 10 35 60 85 1101 35 15 0 r gk =1k r gk =220 junction t emper at ur e (t j ) -- (c) ratio of i gt / i gt (t j = 25c) junction t emper at ur e (t j ) -- (c) ratio of v gt / v gt (t j = 25c) 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 -4 0- 15 10 35 60 85 11 01 35 15 figure 2: normalized dc gate trigger voltage vs. junction temperature
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series 0 3 6 9 12 15 0. 70 .8 0. 91 1. 11 .2 1. 31 .4 1. 51 .6 1. 71 .8 1. 92 in ta nt an e ous on -s ta te cu rren t (i t ) ? a mp s in st an ta ne ous on -s ta te vo lt ag e (v t ) ?v ol ts figure 4: on-state current vs. on-state voltage (typical) figure 6: maximum allowable case temperature vs. rms on-state current 80 90 100 110 120 130 140 150 160 01 23 45 ma xi mu m al lo wa bl e ca se te mp er at ur e (t c )- rm s on -s tate cu rren t [ i t (r ms ) ] -( am ps ) c 0 0. 5 1 1. 5 2 2. 5 3 3. 5 4 4. 5 5 01234 av er ag e on -s ta te po we r di ssip at io n [p d( av ) ] -( wa tts ) rm s on -s ta te cu rren t [i t (r ms ) ] -( am ps ) figure 5: power dissipation (typical) vs. rms on-state current 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 -4 0- 15 10 35 60 85 11 01 35 ra ti o of i h / i h (t j = 25c) ju nc ti on te mp er at ur e (t j ) -- (c) 15 figure 3: normalized dc holding current vs. junction temperature figure 8: peak capacitor discharge current 10 10 0 1 000 0.5 1. 01 0.0 50.0 pulse cur r ent dur ation (t w ) - ms p eak disc har ge curr ent (i tm ) - amps i trm t w figure 7: maximum allowable case temperature vs. average on-state current m axi mu m a llo wa bl e ca se te mp er at ur e (t c )- average on -s tate cu rre nt [av] -( am ps ) c 80 90 100 110 120 130 140 150 160 00 .5 1.01 .5 2.02 .5 3.03 .5
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series 1 10 10 0 1 000 11 01 00 1 000 p eak sur ge (non-r epetitiv e) on-stat e cur r ent (i tsm ) ? amps sur ge cur r ent dur ation -- f ull cy cles figure 9: surge peak on-state current vs. number of cycles supply frequency: 60 hz sinusoidal load: resistive rms on-state current: [i t(rms) ]: maximum rated value at specifed case temperature notes: 1. gate control may be lost during and immediately following surge current interval. 2. overload may not be repeated until junction temperature has returned to steady-state rated value. figure 10: typical dc gate trigger current with r gk vs. junction temperature 0. 10 1. 00 10 .0 0 -4 0- 15 10 35 60 85 11 01 35 i gt (m a) j unc ti on te mp er at ur e (t ) -- (c) r gk = 100 r gk = 470 r gk = 220 r gk =1 k 15 0 figure 11: typical dc holding current with r gk vs. junction temperature 10 0. 0e -0 3 1. 0e +0 0 10 .0 e+ 00 -4 0- 15 10 35 60 85 11 01 35 ih (m a) ju nc ti on te mp er at ur e (t ) -- (c) r gk =1 00 r gk = 470 r gk = 220 r gk =1 k 15 0 figure 12: typical static dv/dt with r gk vs. junction temperature 1 10 10 0 10 00 25 75 12 5 st at ic d v/ dt ( v/ s ) r gk =1 00 r gk = 470 r gk = 220 r gk =1 k
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series soldering parameters refow condition pb C free assembly pre heat - temperature min (t s(min) ) 150c - temperature max (t s(max) ) 200c - time (min to max) (t s ) 60 C 180 secs average ramp up rate (liquidus temp) (t l ) to peak 5c/second max t s(max) to t l - ramp-up rate 5c/second max refow - temperature (t l ) (liquidus) 217c - time (t l ) 60 C 150 seconds peak temperature (t p ) 260 +0/-5 c time within 5c of actual peak temperature (t p ) 20 C 40 seconds ramp-down rate 5c/second max time 25c to peak temperature (t p ) 8 minutes max. do not exceed 280c ti me te mperature t p t l t s(max) t s(min) 25 t p t l t s time to peak temperature preheat p r e h eat ramp-up ramp-up ramp-down r am p - do physical specifcations environmental specifcations test specifcations and conditions ac blocking mil-std-750, m-1040, cond a applied peak ac voltage for 1008 hours temperature cycling mil-std-750, m-1051, 100 cycles; -40c to +150c; 15-min dwell-time temperature/ humidity eia / jedec, jesd22-a101 1008 hours; 160v - dc: 85c; 85% rel humidity high temp storage mil-std-750, m-1031, 1008 hours; 150c low-temp storage 1008 hours; -40c resistance to solder heat mil-std-750 method 2031 solderability ansi/j-std-002, category 3, test a lead bend mil-std-750, m-2036 cond e moisture sensitivity level level 1, jedec-j-std-020 terminal finish 100% matte tin-plated body material ul recognized epoxy meeting fammability rating v-0 lead material copper alloy design considerations careful selection of the correct component for the applications operating parameters and environment will go a long way toward extending the operating life of the thyristor. good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. correct mounting, soldering, and forming of the leads also help protect against component damage.
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series dimensions to-251aa (v/i-package) v/i-pak through hole dimension inches millimeters min typ max min typ max a 0.037 0.040 0.043 0.94 1. 01 1.09 b 0.235 0.242 0.245 5.97 6.15 6.22 c 0.350 0.361 0.375 8.89 9.18 9.53 d 0.205 0.208 0.213 5.21 5.29 5.41 e 0.255 0.262 0.265 6.48 6.66 6.73 f 0.027 0.031 0.033 0.69 0.80 0.84 g 0.087 0.090 0.093 2.21 2.28 2.36 h 0.085 0.092 0.095 2.16 2.34 2.41 i 0.176 0.180 0.184 4.47 4.57 4.67 j 0.018 0.020 0.023 0.46 0.51 0.58 k 0.035 0.037 0.039 0.90 0.95 1. 0 0 l 0.018 0.020 0.023 0.46 0.52 0.58 p 0.042 0.047 0.052 1.06 1.20 1.32 q 0.034 0.039 0.044 0.86 1. 0 0 1. 11 r 0.034 0.039 0.044 0.86 1. 0 0 1. 11 s 0.074 0.079 0.084 1.86 2.00 2.11 area: 0.040 in 2 t c mea suring poin t ga te g i e d a b c f j h k l 5.28 .208 5.34 .21 0 anode cathode anode p q r s dimensions to-252aa (d-package) d-pak surface mount dimension inches millimeters min ty p max min ty p max a 0.037 0.040 0.043 0.94 1. 01 1.09 b 0.235 0.243 0.245 5.97 6.16 6.22 c 0.106 0.108 0.113 2.69 2.74 2.87 d 0.205 0.208 0.213 5.21 5.29 5.41 e 0.255 0.262 0.265 6.48 6.65 6.73 f 0.027 0.031 0.033 0.69 0.80 0.84 g 0.087 0.090 0.093 2.21 2.28 2.36 h 0.085 0.092 0.095 2.16 2.33 2.41 i 0.176 0.179 0.184 4.47 4.55 4.67 j 0.018 0.020 0.023 0.46 0.51 0.58 k 0.035 0.037 0.039 0.90 0.95 1. 0 0 l 0.018 0.020 0.023 0.46 0.51 0.58 m 0.000 0.000 0.004 0.00 0.00 0.10 n 0.021 0.026 0.027 0.53 0.67 0.69 o 0 0 5 0 0 5 p 0.042 0.047 0.052 1.06 1.20 1.32 q 0.034 0.039 0.044 0.86 1. 0 0 1. 11 m o n h j l k .1 18 3 .063 1 .60 .071 1 .80 .264 6.71 .264 6.71 .1 81 4.60 ga te anode cathode anode t c mea suring poin t g i d e a b c f 5.28 .208 5.34 .21 0 : 0.040 in 2 area p q
revised: 08/02/17 specifcations are subject to change without notice. ?2017 littelfuse, inc thyristors 4 amp high temperature sensitive scrs sjxx04xsx series 0.512 (13.0) arbor hole dia. xxxxxx xxxxxx xxxxxx dc xxxxxx gate cathode anode 0.63 (16.0) 0.157 (4.0) 0.64 (16.3) 12.99 (330.0) 0.524 (13.3) 0.315 (8.0) 0.059 dia (1.5) * * co ve r tape direction of f eed dimensions are in inches (and millimeters). dc dc to-252 embossed carrier reel pack (rp) specifcations meets all eia-481-2 standards part numbering system part marking system current 04: 4a sensitivity s2: 0.2ma package type v: to-251 (vpak) d: to-252 (dpak) voltage rating 40 : 400v 60 : 600v sj 60 04 d s2 component type sj: scr ymldd ? date code marking y: y ear code m: month code l: location cod e dd: calendar code sjxx04ds2 packing options part number marking weight packing mode base quantity sjxx04ds2tp sjxx04ds2 0.3 g tube 750 (75 per tube) sjxx04ds2rp sjxx04ds2 0.3 g embossed carrier 2500 sjxx04vs2tp sjxx04vs2 0.4 g tube 750 (75 per tube) note: xx = voltage product selector part number voltage gate sensitivity type package 400v 600v sjxx04vs2 x x 0.2ma sensitive scr to-251 sjxx04ds2 x x 0.2ma sensitive scr to-252 note: xx = voltage disclaimer notce - informaton furnished is believed to be accurate and reliable. however, users should independently evaluate the suitability of and test each product selected for their own applicatons. litelfuse products are not designed for, and may not be used in, all applicatons. read complete disclaimer notce at www.litelfuse.com/disclaimier-electronics .
|
